BCR8 查看數據表（PDF） - MITSUBISHI ELECTRIC
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BCR8 Datasheet PDF : 11 Pages
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The product guaranteed maximum junction
temperature 150°C (See warning.)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
60
III QUADRANT
40
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
140
Tj = 150°C
120
100
80
60
40
III QUADRANT
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
7
5
SUPPLY
VOLTAGE
3 MAIN CURRENT
MAIN
2 VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
101
7
5 MINIMUM
CHARAC-
3 TERISTICS
2 VALUE
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
100
7
100 2 3 5 7 101 2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
IFGT I
4
3
IRGT I
2
IRGT III
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µ s)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
7
5
SUPPLY
VOLTAGE
3 MAIN CURRENT
MAIN
2 VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
101
VD = 200V
f = 3Hz
7
5
III QUADRANT
I QUADRANT
3
2
MINIMUM
CHARAC-
100
7
100
23
5 7 101
TERISTICS
VALUE
2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
Mar. 2002
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