BD645(2002) 查看數據表（PDF） - Bourns, Inc

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BD645
(Rev.:2002)

NPN SILICON POWER DARLINGTONS

Bourns, Inc 

BD645, BD647, BD649, BD651

NPN SILICON POWER DARLINGTONS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD645

60

Collector-emitter

V(BR)CEO breakdown voltage

IC = 30 mA

IB = 0

BD647

80

(see Note 5)

BD649

100

BD651

120

VCE = 30 V

IB = 0

BD645

0.5

ICEO

Collector-emitter

cut-off current

VCE = 40 V

VCE = 50 V

IB = 0

IB = 0

BD647

0.5

BD649

0.5

VCE = 60 V

IB = 0

BD651

0.5

VCB = 60 V

IE = 0

BD645

0.2

VCB = 80 V

IE = 0

BD647

0.2

VCB = 100 V

IE = 0

BD649

0.2

ICBO

Collector cut-off

current

VCB = 120 V

VCB = 40 V

IE = 0

IE = 0

TC = 150°C

BD651

BD645

0.2

2.0

VCB = 50 V

IE = 0

TC = 150°C

BD647

2.0

VCB = 60 V

IE = 0

TC = 150°C

BD649

2.0

VCB = 70 V

IE = 0

TC = 150°C

BD651

2.0

Emitter cut-off

IEBO current

VEB = 5 V

IC = 0

(see Notes 5 and 6)

5

Forward current

hFE

transfer ratio

VCE = 3 V

IC = 3 A

(see Notes 5 and 6)

750

Collector-emitter

VCE(sat) saturation voltage

IB = 12 mA

IB = 50 mA

IC = 3 A

IC = 5 A

(see Notes 5 and 6)

2

2.5

Base-emitter

VBE(sat) saturation voltage

IB = 50 mA IC = 5 A

(see Notes 5 and 6)

3

Base-emitter

VBE(on) voltage

VCE = 3 V

IC = 3 A

(see Notes 5 and 6)

2.5

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

V

thermal characteristics

RθJC

RθJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

2.0 °C/W

62.5 °C/W

PRODUCT INFORMATION

2

MAY 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

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