BD745C 查看數據表（PDF） - Bourns, Inc
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BD745C Datasheet PDF : 5 Pages
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BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCS635AE
TC = 125°C
TC = 25°C
TC = -55°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
IC
IB
= 10
TCS635AF
tp = 300µs, duty cycle < 2%
1·0
0·1
VCE = 4 V
tp = 300 µs, duty cycle < 2%
10
0·1
1·0
10
IC - Collector Current - A
Figure 1.
0·01
100
0·1
TC = -55°C
TC = 25°C
TC = 125°C
1·0
10
100
IC - Collector Current - A
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS635AC
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
10
tp = 50 ms,
d = 0.1 = 10%
DC Operation
1·0
0·1
0·01
1·0
BD745
BD745A
BD745B
BD745C
10
100
VCE - Collector-Emitter Voltage - V
Figure 3.
1000
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
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