BD746B 查看數據表（PDF） - Inchange Semiconductor

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产品描述 (功能)

比赛名单

BD746B

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BD746

V(BR)CEO

Collector-emitter

breakdown voltage

BD746A

BD746B

IC=-30mA; IB=0

BD746C

VCEsat-1 Collector-emitter saturation voltage

IC=-5 A;IB=-0.5 A

VCEsat-2 Collector-emitter saturation voltage

IC=-20 A;IB=-5 A

VBE -1 Base-emitter on voltage

IC=-5A ; VCE=-4V

VBE -2 Base-emitter on voltage

IC=-20A ; VCE=-4V

BD746/A VCE=-30V; IB=0

ICEO

Collector cut-off current

BD746B/C VCE=-60V; IB=0

BD746

VCE=-50V; VBE=0

TC=125℃

ICBO

Collector cut-off current

BD746A

BD746B

VCE=-70V; VBE=0

TC=125℃

VCE=-90V; VBE=0

TC=125℃

BD746C

VCE=-110V; VBE=0

TC=125℃

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-4V

hFE-2

DC current gain

IC=-5A ; VCE=-4V

hFE-3

DC current gain

IC=-20A ; VCE=-4V

Switching times resistive load

td

Delay time

tr

Rise time

ts

Storage time

IC=-5 A;IB1=-IB2=-0.5 A

VBE(off)=4.2V; RL=6Ω

tp=20μs

tf

Fall time

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

2

Product Specification

BD746/A/B/C

MIN

-45

-60

-80

-100

TYP.

MAX UNIT

V

-1.0

V

-3.0

V

-1.0

V

-3.0

V

-0.1

mA

-0.1

-5.0

-0.1

-5.0

mA

-0.1

-5.0

-0.1

-5.0

-0.5

mA

40

20

150

5

0.02

μs

0.12

μs

0.6

μs

0.3

μs

MAX

1.1

UNIT

℃/W

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