BDX65B 查看數據表（PDF） - SavantIC Semiconductor

零件编号

产品描述 (功能)

比赛名单

BDX65B

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BDX65B

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH

VCEsat Collector-emitter saturation voltage IC=5A ;IB=20mA

VBE

Base-emitter on voltage

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

IC=5A;VCE=3V

VCB=100V; IE=0

TC=150

VCE=50V; IB=0

VEB=5V; IC=0

VF

Diode forward voltage

IF=3A

hFE-1

hFE-2

hFE-3

fT

DC current gain

DC current gain

DC current gain

Transition frequency

IC=1A ; VCE=3V

IC=5A ; VCE=3V

IC=10A ; VCE=3V

IC=5A ; VCE=3V

MIN TYP. MAX UNIT

100

V

2

V

3

V

0.4

3

mA

1

mA

5

mA

1.8

V

1500

1000

1500

7

MHz

2

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