BS107(2000) 查看數據表（PDF） - ON Semiconductor
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BS107 Datasheet PDF : 8 Pages
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BS107, BS107A
Preferred Device
Small Signal MOSFET
250 mAmps, 200 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
200
Vdc
VGS
±20
Vdc
VGSM
±30
Vpk
mAdc
ID
250
IDM
500
PD
350
mW
Operating and Storage Junction
Temperature Range
TJ, Tstg –55 to
°C
150
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
http://onsemi.com
250 mAMPS
200 VOLTS
RDS(on) = 14 Ω (BS107)
RDS(on) = 6.4 Ω (BS107A)
N–Channel
D
G
S
TO–92
CASE 29
Style 30
123
MARKING DIAGRAM
& PIN ASSIGNMENT
BS107
YWW
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Drain
3
Source
2
Gate
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
BS107/D
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