BS616LV2016 查看數據表（PDF） - Brilliance Semiconductor

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BS616LV2016

Very Low Power CMOS SRAM 128K X 16 bit

Brilliance Semiconductor 

n Revision History

Revision No. History

1.2

Add Icc1 characteristic parameter

Improve Iccsb1 spec.

I-grade from 30uA to 20uA at 5.0V

5.0uA to 2.0uA at 3.0V

C-grade from 10uA to 6.0uA at 5.0V

3.0uA to 0.7uA at 3.0V

1.3

Change I-grade operation temperature range

- from –25OC to –40OC

1.4

Add 48-ball BGA package

BS616LV2016

Draft Date

Jan. 13, 2006

Remark

May. 25, 2006

Nov. 02, 2006

R0201-BS616LV2016

11

Revision 1.4

Nov.

2006

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