BS616LV1011 查看數據表（PDF） - Brilliance Semiconductor
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BS616LV1011 Datasheet PDF : 9 Pages
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BSI
BS616LV1011
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
V TERM
V cc
T BIAS
PARAMETER
Terminal Voltage with
Respect to GND
Power Supply Voltage
Temperature Under Bias
RATING
-0.5 to
Vcc+0.5
-0.5 to
Vcc+0.5
-40 to +85
UNITS
V
V
OC
OPERATING RANGE
RANGE
Commercial
AMBIENT
TEMPERATURE
0 O C to +70 O C
Industrial
-40 O C to +85 O C
Vcc
2.4V ~ 5.5V
2.4V ~ 5.5V
T STG
PT
Storage Temperature
Power Dissipation
-60 to +150
OC
1.0
W
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
I OUT
DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
VI/O=0V
MAX. UNIT
6
pF
8
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
NAME
VIL
VIH
IIL
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(3)
Input Leakage Current
TEST CONDITIONS
Vcc = Max, VIN = 0V to Vcc
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
MIN. TYP. (1) MAX.
UNITS
-0.5
--
0.8
V
2.0
--
Vcc+0.3
V
2.2
--
--
1
uA
ILO
VOL
VOH
ICC(6)
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
--
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2mA
Vcc = Min, IOH = -1mA
Vcc=3.0V
--
--
Vcc=5.0V
Vcc=3.0V
2.4
--
Vcc=5.0V
Operating Power Supply CE = VIL, IDQ = 0mA,
Current
F = Fmax(4)
70ns
Vcc=3.0V
Vcc=5.0V
--
--
--
--
1
uA
0.4
V
--
V
18
mA
38
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc=3.0V
--
--
Vcc=5.0V
--
--
1
mA
2
ICCSB1(5)
CE ≧ Vcc-0.2V,
Vcc=3.0V
--
Standby Current-CMOS
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V Vcc=5.0V
--
0.4
1.3
2.5
8
uA
1. Typical characteristics are at TA = 25oC.
3. Overshoot : Vcc+1.5V in case of pulse width ≦20ns.
5. IccsB1_Max. is 1.3uA/4.0uA at Vcc=3.0V/5.0V and TA=70oC.
2. Undershoot : -1.5V in case of pulse width ≦20ns.
4. Fmax = 1/tRC .
6. Icc_Max. is 23mA(@3V)/ 50mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
CE ≧ Vcc - 0.2V
VDR
Vcc for Data Retention
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
ICCDR(3)
Data Retention Current
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.15
0.8
uA
tCDR
Chip Deselect to Data
Retention Time
tR
Operation Recovery Time
See Retention Waveform
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.45uA at TA=70OC.
R0201-BS616LV1011
3
Revision 1.0
Apr. 2004
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