BS616LV161 查看數據表（PDF） - Brilliance Semiconductor
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BS616LV161 Datasheet PDF : 8 Pages
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BSI
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
NAME
VIL
PARAMETER
Guaranteed Input Low
Voltage(3)
TEST CONDITIONS
VIH
Guaranteed Input High
Voltage(3)
Vcc=3V
Vcc=3V
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
ILO
Output Leakage Current
Vcc = Max, CE1 = VIH, or CE2 = ViL, or
OE = VIH, VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL= 2mA
Vcc=3V
BS616LV1613
MIN. TYP. (1) MAX.
UNITS
-0.5
--
0.8
V
2.0
--
Vcc+0.3
V
--
--
1
uA
--
--
1
uA
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH= -1mA
Vcc=3V 2.4
--
--
V
(4)
ICC
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH
, IDQ = 0mA, F = Fmax(2)
55ns
70ns
Vcc=3V
--
--
--
--
46
37
mA
ICCSB
Standby Current-TTL
CE1 = VIH or CE2 = VIL
, IDQ = 0mA
Vcc=3V
--
--
1.3
mA
(5)
CE1≧Vcc-0.2V or
ICCSB1
Standby Current-CMOS CE2≦0.2V ;VIN≧Vcc - 0.2V
Vcc=3V
--
3
20
uA
or VIN≦ 0.2V
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 45mA(@55ns) / 36mA(@70ns) during 0~70oC operation.
5. IccsB1 is 10uA at Vcc=3.0V and TA=70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VDR
Vcc for Data Retention
CE1 ≧ Vcc - 0.2V or CE2≦0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
(3)
ICCDR
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2≦0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
1.5
5
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR(Max.) is 2.5uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE1≥ Vcc - 0.2V
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
tR
VIH
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR ≧ 1.5V
CE2 ≦ 0.2V
Vcc
tR
VIL
R0201-BS616LV1613
3
Revision 1.1
Jan. 2004
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