BS62LV8001 查看數據表（PDF） - Brilliance Semiconductor
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BS62LV8001 Datasheet PDF : 10 Pages
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n DC ELECTRICAL CHARACTERISTICS (TA =-40OC to +85OC)
BS62LV8001
PARAMETER
NAME
PARAMETER
VCC
Power Supply
TEST CONDITIONS
MIN.
2.4
TYP.(1) MAX. UNITS
--
5.5
V
VIL
Input Low Voltage
-0.5(2)
--
0.8
V
VIH
Input High Voltage
2.2
--
VCC+0.3(3)
V
IIL
Input Leakage Current
VIN = 0V to VCC
ILO
Output Leakage Current
VI/O = 0V to VCC,
CE1= VIH or CE2= VIL, or OE = VIH
VOL
Output Low Voltage
VCC = Max, IOL = 2.0mA
--
--
1
uA
--
--
1
uA
--
--
0.4
V
VOH
Output High Voltage
VCC = Min, IOH = -1.0mA
2.4
--
--
V
I (5)
CC
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
IDQ = 0mA, f = FMAX(4)
VCC=3.0V
--
VCC=5.0V
ICC1
Operating Power Supply CE1 = VIL and CE2 = VIH,
Current
IDQ = 0mA, f = 1MHz
VCC=3.0V
--
VCC=5.0V
ICCSB
Standby Current – TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
VCC=3.0V
--
VCC=5.0V
I (6)
CCSB1
Standby Current – CMOS
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦ 0.2V
VCC=3.0V
VCC=5.0V
--
31
--
mA
76
2
--
mA
10
1.0
--
mA
2.0
0.8
8.0
uA
3.5
50
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICC (MAX.) is 30mA/75mA at VCC=3.0V/5.0V and TA=70OC.
6. ICCSB1(MAX.) is 4.0uA/25uA at VCC=3.0V/5.0V and TA=70OC.
n DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
VDR
I (3)
CCDR
tCDR
tR
PARAMETER
TEST CONDITIONS
VCC for Data Retention
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
Data Retention Current
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
Retention Time
See Retention Waveform
Operation Recovery Time
1. VCC=1.5V, TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCRD(Max.) is 2.0uA at TA=70OC.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
VCC
CE1
VCC
tCDR
VIH
Data Retention Mode
VDR≧1.5V
CE1≧VCC - 0.2V
MIN. TYP. (1) MAX. UNITS
1.5
--
--
V
--
0.4
4.0
uA
0
--
tRC (2)
--
--
ns
--
ns
VCC
tR
VIH
R0201-BS62LV8001
3
Revision 2.3
May.
2006
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