BSM100GB120DLC 查看數據表（PDF） - eupec GmbH

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BSM100GB120DLC

IGBT-Modules

eupec GmbH 

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

BSM100GB120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor

Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

Anstiegszeit (induktive Last)

rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)

turn off delay time (inductive load)

Fallzeit (induktive Last)

fall time (inductive load)

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

Kurzschlußverhalten

SC Data

Modulinduktivität

stray inductance module

IC = 100A, VCE = 600V

VGE = ±15V, RG = 6,8Ω, Tvj = 25°C

VGE = ±15V, RG = 6,8Ω, Tvj = 125°C

IC = 100A, VCE = 600V

VGE = ±15V, RG = 6,8Ω, Tvj = 25°C

VGE = ±15V, RG = 6,8Ω, Tvj = 125°C

IC = 100A, VCE = 600V

VGE = ±15V, RG = 6,8Ω, Tvj = 25°C

VGE = ±15V, RG = 6,8Ω, Tvj = 125°C

IC = 100A, VCE = 600V

VGE = ±15V, RG = 6,8Ω, Tvj = 25°C

VGE = ±15V, RG = 6,8Ω, Tvj = 125°C

IC = 100A, VCE = 600V, VGE = 15V

RG = 6,8W, Tvj = 125°C, LS = 60nH

IC = 100A, VCE = 600V, VGE = 15V

RG = 6,8Ω, Tvj = 125°C, LS = 60nH

tP ≤ 10µsec, VGE ≤ 15V, RG = 6,8Ω

TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt

vorläufige Daten

preliminary data

min. typ. max.

td,on

-

0,06

-

µs

-

0,06

-

µs

tr

-

0,05

-

µs

-

0,05

-

µs

td,off

-

0,35

-

µs

-

0,40

-

µs

tf

-

0,06

-

µs

-

0,08

-

µs

Eon

-

10

-

mWs

Eoff

-

12

-

mWs

ISC

LsCE

-

650

-

A

-

25

-

nH

Modul Leitungswiderstand, Anschlüsse – Chip

module lead resistance, terminals – chip

TC=25°C

RCC‘+EE‘

-

0,60

-

mΩ

Charakteristische Werte / Characteristic values

Diode / Diode

Durchlaßspannung

forward voltage

IF = 100A, VGE = 0V, Tvj = 25°C

IF = 100A, VGE = 0V, Tvj = 125°C

Rückstromspitze

peak reverse recovery current

IF = 100A, - diF/dt = 2700A/µsec

VR = 600V, VGE = -15V, T vj = 25°C

VR = 600V, VGE = -15V, T vj = 125°C

Sperrverzögerungsladung

recovered charge

IF = 100A, - diF/dt = 2700A/µsec

VR = 600V, VGE = -15V, T vj = 25°C

VR = 600V, VGE = -15V, T vj = 125°C

Abschaltenergie pro Puls

reverse recovery energy

IF = 100A, - diF/dt = 2700A/µsec

VR = 600V, VGE = -15V, T vj = 25°C

VR = 600V, VGE = -15V, T vj = 125°C

min. typ. max.

VF

-

1,8

2,3

V

-

1,7

V

IRM

-

125

-

A

-

155

-

A

Qr

-

12

-

µAs

-

22

-

µAs

Erec

-

4

-

mWs

-

9

-

mWs

2(8)

DB_BSM100GB120DLC.xls

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