BSM200GA120DN2S 查看數據表（PDF） - eupec GmbH

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BSM200GA120DN2S

IGBT Power Module

eupec GmbH 

BSM 200 GA 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE(th)

VGE = VCE, IC = 8 mA

4.5

5.5

6.5

Collector-emitter saturation voltage

VCE(sat)

VGE = 15 V, IC = 200 A, Tj = 25 °C

-

2.5

3

VGE = 15 V, IC = 200 A, Tj = 125 °C

-

3.1

3.7

Zero gate voltage collector current

ICES

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

-

3

4

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

-

12

-

Gate-emitter leakage current

IGES

VGE = 20 V, VCE = 0 V

-

-

200

AC Characteristics

Transconductance

VCE = 20 V, IC = 200 A

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

gfs

108

-

-

Ciss

-

13

-

Coss

-

2

-

Crss

-

1

-

Unit

V

mA

nA

S

nF

2

Oct-27-1997

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