BSS82C 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
BSS82C Datasheet PDF : 6 Pages
| |||
BSS80, BSS82
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BSS80
40
-
BSS82
60
-
V
-
-
Collector-base breakdown voltage
V(BR)CBO 60
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
-
Collector cutoff current
ICBO
-
-
10 nA
VCB = 50 V, IE = 0
Collector cutoff current
VCB = 50 V, IE = 0 , TA = 150 °C
ICBO
-
-
10 µA
Emitter cutoff current
VEB = 3 V, IC = 0
IEBO
-
-
10 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE
BSS80/82B
BSS80/82C
40
-
75
-
-
-
-
IC = 1 mA, VCE = 10 V
BSS80/82B
BSS80/82C
40
-
-
100 -
-
IC = 10 mA, VCE = 10 V
BSS80/82B
40
-
-
BSS80/82C
100 -
-
IC = 150 mA, VCE = 10 V
BSS80/82B
BSS80/82C
40
- 120
100 - 300
IC = 500 mA, VCE = 10 V
BSS80/82B
BSS80/82C
40
-
-
50
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1) Pulse test: t ≤=300µs, D = 2%
VCEsat
V
-
-
0.4
-
-
1.6
VBEsat
-
-
1.3
-
-
2.6
2
Nov-30-2001
Share Link: 