BSS209PW(2001) 查看數據表（PDF） - Infineon Technologies

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BSS209PW
(Rev.:2001)

OptiMOS®-P Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSS 209PW

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

gfs

çVDSç≥2*çIDç*RDS(on)max 0.87 1.74

-S

ID =-0.46A

Input capacitance

Ciss

VGS=0, VDS=-15V,

- 89.9 - pF

Output capacitance

Coss

f=1MHz

- 40.1 -

Reverse transfer capacitance Crss

- 31.5 -

Turn-on delay time

td(on)

VDD=-10V, VGS=-4.5V,

-

4.4 6.6 ns

Rise time

tr

ID=-0.58A, RG=6Ω

-

5.8 8.7

Turn-off delay time

td(off)

-

7.6 11.4

Fall time

tf

-

4.5 6.7

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Qgs

Qgd

Qg

VDD=-10V, ID=-0.58A

VDD=-10V, ID=-0.58A,

VGS=0 to -4.5V

Gate plateau voltage

V(plateau) VDD=-10V, ID=-0.58A

Reverse Diode

Inverse diode continuous

IS

forward current

TA=25°C

Inverse diode direct current, ISM

pulsed

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

VGS=0, |IF| = |ID|

VR=-10V, |IF| = |lD|,

diF/dt=100A/µs

- -0.12 -0.17 nC

- -0.74 -1.1

- -0.92 -1.38

- -1.7 - V

-

- -0.5 A

-

- -2.3

- -1.3 -0.88 V

-

9 11.2 ns

- 1.27 1.59 nC

Page 3

2001-12-05

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