BSS209PW(2001) 查看數據表（PDF） - Infineon Technologies
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BSS209PW Datasheet PDF : 8 Pages
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Preliminary data
BSS 209PW
13 Typ. avalanche energy
EAS = f (Tj), par.: ID = -0.58 A
VDD = -10 V, RGS = 25 Ω
4
mJ
3
2.5
2
1.5
1
0.5
0
25
50
75
100
°C
150
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
14 Typ. gate charge
|VGS| = f (QGate)
parameter: ID = -0.58 A pulsed
12
V
10
9
8
7 0.2 Vds max
0.5 Vds max
6 0.8 Vds max
5
4
3
2
1
0
0
0.5
1
1.5
2
nC
3
|QGate|
-24.5 BSS 209PW
V
-23.5
-23
-22.5
-22
-21.5
-21
-20.5
-20
-19.5
-19
-18.5
-18
-60 -20
20
60 100 °C
180
Tj
Page 7
2001-12-05
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