BTS723GW 查看數據表（PDF） - Infineon Technologies
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BTS723GW Datasheet PDF : 15 Pages
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Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, Vbb = 24 V unless otherwise specified
BTS 723 GW
Values
Unit
min typ Max
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
Device on PCB7), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled up 8); IL(GNDhigh)
Vbb = 30 V, VIN = 0,
see diagram page 11
Turn-on time9)
Turn-off time
RL = 12 Ω
Slew rate on 9)
IN
to 90% VOUT: ton
IN
to 10% VOUT: toff
dV/dton
10 to 30% VOUT, RL = 12 Ω:
Slew rate off 9)
70 to 40% VOUT, RL = 12 Ω:
-dV/dtoff
2.5 2.9
4.0 4.2
-- A
--
--
-- 1.0 mA
--
-- 55 µs
--
-- 95
1.0
--
5 V/µs
1.0
--
5 V/µs
Operating Parameters
Operating voltage
Undervoltage restart of charge pump
Tj =-40...+25°C:
Tj =+150°C:
Overvoltage protection10)
I bb = 40 mA
Standby current11)
VIN = 0; see diagram page 10
Tj =-40°C...+25°C:
Tj =+125°C12):
Tj =+150°C:
Off-State output current (included in Ibb(off))
VIN = 0; each channel
Operating current 13), VIN = 5V,
one channel on:
all channels on:
Vbb(on)
Vbb(ucp)
Vbb(AZ)
Ibb(off)
IL(off)
IGND
7.0
--
--
58.5
--
--
--
--
-- 58 V
4 5.5 V
-- 7.0
63 69 V
13 23 µA
23
25 35
3
-- µA
-- 1.0 1.5 mA
-- 2.0 3.0
7) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
8) not subject to production test, specified by design
9) See timing diagram on page 13.
10) Supply voltages higher than Vbb(AZ) require an external current limit for the GND; a 150Ω resistor is
recommended. See also VON(CL) in table of protection functions and circuit diagram on page 10.
11) Measured with load; for the whole device; all channels off
12) not subject to production test, specified by design
13) Add IST, if IST > 0
Infineon Technologies AG
6
2003-Oct-01
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