BU103A 查看數據表（PDF） - Inchange Semiconductor
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BU103A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU103A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CER Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 220Ω
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.2A; IB= 20mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.2A; VCE= 10V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current Gain-Bandwidth Product
IC= 0.1A; VCE= 10V
MIN TYP. MAX UNIT
120
V
1.0
V
0.1 mA
0.1 mA
50
200
50
pF
100
MHz
isc Website：www.iscsemi.cn
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