BU2508A 查看數據表（PDF） - Philips Electronics
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BU2508A Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508A
BU2508A
IC
DIODE
ICM
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.3. Switching times waveforms.
ICM
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICM
1mH
IBend
-VBB
LB
BU2508A
BY228
12nF
Fig.5. Switching times test circuit (BU2508A).
100 h FE
5V
10
1V
Tj = 25 C
Tj = 125 C
1
0.01
0.1
1
10
IC / A
Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
1.2 VBESAT / V
1.1
Tj = 25 C
Tj = 125 C
1
BU2508A
0.9
0.8
IC/IB=
0.7
3
4
0.6
5
0.5
0.4
0.1
1
10
IC / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
1 VCESAT / V
BU2508A
0.9
IC/IB=
0.8
5
0.7
4
0.6
3
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
IC / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
November 1995
3
Rev 1.300
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