BU2508D 查看數據表（PDF） - Inchange Semiconductor

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BU2508D

iscSilicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU2508D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0,L= 25mH

700

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 600mA; IC= 0

7.5

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.1A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.29A

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 4.5A; IB= 1.7A

VCE= 1500V ; VBE= 0

VCE= 1500V ; VBE= 0; TC=125℃

VEB= 7.5V; IC= 0

140

5.0

V

1.0

V

1.3

V

1.0

2.0

mA

390 mA

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

7

23

hFE-2

DC Current Gain

IC= 4.5A ; VCE= 1V

4

VECF

C-E Diode Forward Voltage

IF= 4.5A

2.0

V

COB

Output Capacitance

Switching times

IE= 0; VCB= 10V; ftest= 1MHz

80

pF

tstg

Storage Time

tf

Fall Time

IC= 4.5A , IB(end)= 1.1A; LB= 6μH

-VBB= 4V; (-dIB/dt= 0.6A/μs)

6.0 μs

0.6 μs

isc Website：www.iscsemi.cn

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