BUL38D 查看數據表（PDF） - Inchange Semiconductor

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比赛名单

BUL38D

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH

V(BR)EBO Emitter-base breakdown voltage

IE=10mA; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A

VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A

VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.75A

VBEsat-1 Base-emitter saturation voltage

IC=1A ;IB=0.2A

VBEsat-2 Base-emitter saturation voltage

ICES

Collector cut-off current

ICEO

Collector cut-off current

IC=2A ;IB=0.4A

VCE=800V; VBE=0

TC=125℃

VCE=450V; IB=0

hFE-1

hFE-2

hFE-3

DC current gain

DC current gain

DC current gain

IC=10mA ; VCE=5V

IC=0.5A ; VCE=5V

IC=2A ; VCE=5V

VF

Diode forward voltage

IC=2A

Switching times resistive load

ts

Storage time

tf

Fall time

VCC=150V ,IC=2.5A

IB1=-IB2=0.5A;tp=30μs

‹ hFE-1 classifications

A

B

13-23

22-32

Product Specification

BUL38D

MIN TYP. MAX UNIT

450

V

9

0.5

V

0.7

V

1.1

V

1.1

V

1.2

V

100

500

μA

250 μA

10

60

13

32

1.5

V

1.0

2.2 μs

0.8 μs

2

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