BUW132H 查看數據表（PDF） - Inchange Semiconductor

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BUW132H

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUW132H

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH

450

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A

2.5

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

3.0

V

VBE(sat) Base-Emitter Saturation Voltage

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 5A; IB=B 0.5A

VCE=VCESMmax;VBE=-1.5V

VCE=VCESMmax;VBE=-1.5V;TJ=100℃

VEB= 6V; IC= 0

1.5

V

0.25

1.5

mA

1

mA

hFE

DC Current Gain

COB

Output Capacitance

Switching Times , Resistive Load

IC= 8A ; VCE= 5V

7

IE= 0 ; VCB= 10V; ftest= 1kHz

350 pF

ton

Turn-On Time

tstg

Storage Time

tf

Fall Time

IC= 5A ;IB1= 0.5A;IB2= -1A

0.4

μs

1.5

μs

0.1

μs

isc Website：www.iscsemi.cn

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