BUW133H 查看數據表（PDF） - Inchange Semiconductor
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BUW133H Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
VCES
Collector- Emitter Voltage
(VBE= 0)
850
VCEO Collector-Emitter Voltage
450
UNIT
V
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IBB
Base Current
10
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
15
A
135
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W
isc Product Specification
BUW133H
isc Website：www.iscsemi.cn
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