C67078-S1350-A2 查看數據表（PDF） - Siemens AG
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C67078-S1350-A2 Datasheet PDF : 9 Pages
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BUZ 101
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 21 A, VGS = 10 V
0.17
Ω
0.14
RDS (on)
0.12
0.10
0.08
98%
0.06
typ
0.04
0.02
0.00
-60 -20
20
60 100 °C 180
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
98%
3.2
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20
20
60 100 °C 180
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 3
pF
C
10 3
A
IF
10 2
Ciss
10 2
Coss
Crss
10 1
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
07/96
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