C67078-S1355-A2 查看數據表（PDF） - Siemens AG

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C67078-S1355-A2

SIPMOS® Power Transistor

Siemens AG 

BUZ 101L

Maximum Ratings

Parameter

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJC

RthJA

Values

Unit

-55 ... + 175 °C

-55 ... + 175

≤ 1.5

K/W

≤ 75

E

55 / 175 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

Unit

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = -40 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = 25 °C

VDS = 50 V, VGS = 0 V, Tj = -40 °C

VDS = 50 V, VGS = 0 V, Tj = 150 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 5 V, ID = 14.5 A

V(BR)DSS

50

VGS(th)

1.2

IDSS

-

-

-

IGSS

-

RDS(on)

-

V

-

-

1.6

2

0.1

1

µA

1

100

nA

10

100

µA

nA

10

100

Ω

0.045 0.06

Semiconductor Group

2

07/96

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