C67078-S3123-A2 查看數據表（PDF） - Siemens AG
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C67078-S3123-A2 Datasheet PDF : 9 Pages
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SIPMOS ® Power Transistor
BUZ 332
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 332
VDS
600 V
ID
8.5 A
RDS(on)
0.8 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 8 A, VDD = 50 V, RGS = 25 Ω
L = 16.3 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3123-A2
Values
Unit
A
8.5
34
8
13
mJ
570
± 20
V
W
150
-55 ... + 150 °C
-55 ... + 150
≤ 0.83
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
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