C67078-S3120-A4 查看數據表（PDF） - Siemens AG

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C67078-S3120-A4

SIPMOS® Power Transistor

Siemens AG 

BUZ 346 S2

Not for new design

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 60 V, VGS = 0 V, Tj = 25 °C

VDS = 60 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 47 A

Symbol

min.

Values

Unit

typ.

max.

V(BR)DSS

60

VGS(th)

2.1

IDSS

-

-

IGSS

-

RDS(on)

-

V

-

-

3

0.1

10

10

0.012

4

µA

1

100

nA

100

Ω

0.018

Semiconductor Group

2

07/96

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