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BYD12 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
比赛名单
BYD12
Philips
Philips Electronics Philips
BYD12 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
Controlled avalanche rectifiers
Preliminary specification
BYD12 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IF = 1 A; see Fig.4
IR
reverse current
VR = VRRMmax
VR = VRRMmax; Tj = 165 °C; see Fig.5
MAX. UNIT
1.05 V
1 µA
100 µA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer 40 µm,
pitch 5 mm; see Fig.6.
1998 Dec 03
3

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