BYM359DX 查看數據表（PDF） - Philips Electronics
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BYM359DX Datasheet PDF : 7 Pages
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Philips Semiconductors
Dual diode
fast, high-voltage
Product specification
BYM359DX
Qs / uC
10
Tj = 150 C
Tj = 25 C
1
BY329
IF = 10 A
10 A
2A
1A
2A
1A
100 Cd / pF
10
BY329
0.1
1
10
100
-dIF/dt (A/us)
Fig.7. Modulator maximum Qs at Tj = 25˚C and 150˚C
1
1
10 VR / V 100
1000
Fig.9. Modulator typical junction capacitance Cd at
f = 1 MHz; Tj = 25˚C
trr / ns
1000
100
BY329
IF = 10 A
10A
1A
1A
Tj = 150 C
Tj = 25 C
10
1
10
100
-dIF/dt (A/us)
Fig.8. Modulator maximum trr measured to 25% of Irrm;
Tj = 25˚C and 150˚C
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
PD
tp
D=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BY229F
Fig.10. Modulator transient thermal impedance
Zth = f(tp)
March 2000
4
Rev 1.000
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