BYX132G 查看數據表（PDF） - Philips Electronics
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BYX132G Datasheet PDF : 4 Pages
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Philips Semiconductors
High-voltage car ignition diode
Product specification
BYX132G
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD61AB2 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
The BYX132G is marked with a red cathode band on the
body.
handbookk, halfpage
a
MBK909
Fig.1 Simplified outline (SOD61AB2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VRRM
VRWM
IF(AV)
IRSM
repetitive peak reverse voltage
crest working reverse voltage
average forward current
non-repetitive peak reverse current
Tstg
storage temperature
Tj
junction temperature
Tj
junction temperature
CONDITIONS
t = 100 µs triangular pulse;
Tj max prior to surge
continuous
max. 30 min.
MIN.
−
−
−
−
−65
−
−
MAX.
2
2
50
50
UNIT
kV
kV
mA
mA
+200 °C
175
°C
200
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
V(BR)R
IR
forward voltage
reverse avalanche breakdown voltage
reverse current
CONDITIONS
IF = 10 mA
IR = 100 µA
VR = VRWMmax; Tj = 175 °C
MIN.
2.5
2.6
−
MAX.
3.5
3.7
30
UNIT
V
kV
µA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient Tamb = Tleads; lead length = 10 mm
VALUE UNIT
90
K/W
2000 Feb 29
2
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