C1210 查看數據表（PDF） - IMP, Inc
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C1210 Datasheet PDF : 4 Pages
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Process C1210
Electrical Characteristics
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρN-well(f)
ρN+
xjN+
ρP+
xjP+
TGOX
TFIELD
ρPOLY2
ρPOLY1
ρM1
ρM2
TPASS
Minimum
0.6
20
50
15
Typical
1.0
35
0.35
75
0.35
24
800
22
35
50
30
200+900
Maximum
1.3
50
100
30
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
Ω/
mΩ/
mΩ/
nm
Comments
n-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CMM
CP1P2
Minimum
1.28
Typical
1.38
0.057
0.035
0.69
0.86
Maximum
1.58
1.03
Unit
fF/µm2
fF/µm2
fF/µm2
fF/µm2
fF/µm2
Comments
48
C1210-4-98
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