MAX2601 查看數據表（PDF） - Maxim Integrated
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MAX2601 Datasheet PDF : 6 Pages
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3.6V, 1W RF Power Transistors
for 900MHz Applications
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage, Shorted Base (VCES) ....................17V
Emitter Base Reverse Voltage (VEBO)...................................2.3V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (IC)........................................1200mA
Continuous Power Dissipation (TA = +70°C)
PSOPII (derate 80mW/°C above +70°C) (Note 1) ..........6.4W
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10sec) .............................+300°C
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
Collector-Emitter Breakdown
Voltage
BVCEO
BVCES
IC < 100µA
Collector-Emitter Sustaining
Voltage
LVCEO IC = 200mA
CONDITIONS
Open base
Shorted base
Collector-Base Breakdown
Voltage
BVCBO IC < 100µA, emitter open
DC Current Gain
Collector Cutoff Current
Output Capacitance
hFE
ICES
COB
IC = 250mA, VCE = 3V
VCE = 6V, VBE = 0V
VCB = 3V, IE = 0mA, f = 1MHz
MIN TYP MAX UNITS
15
V
15
5.0
V
15
V
100
0.05
1.5
µA
9.6
pF
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50Ω, POUT = 30dBm, f = 836MHz, TA = +25°C, unless oth-
erwise noted.)
PARAMETER
Frequency Range
Base Current
Harmonics
Power Gain
Collector Efficiency
SYMBOL
f
IB
2fo, 3fo
η
(Note 2)
CONDITIONS
VCC = 3.6V, POUT = 30dBm
VCC = 3.0V, POUT = 29dBm
POUT = 30dBm
No modulation
MIN TYP MAX UNITS
DC
1
GHz
4.2
mA
-43
dBc
dBc
-42
11.6
dB
58
%
Stability under Continuous
Load Mismatch Conditions
Two-Tone IMR
Noise Figure
VSWR
IM3
IM5
NF
VCC = 5.5V, all angles (Note 3)
POUT = +30dBm total power, f1 = 835MHz,
f2 = 836MHz
VBB = 0.9V
8:1
-16
dBc
-25
3.3
dB
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
2 _______________________________________________________________________________________
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