CM150E3U-24F 查看數據表（PDF） - Mitsumi
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CM150E3U-24F Datasheet PDF : 4 Pages
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REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101
101
23
Irr
trr
5 7 102
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 150A
18
16
VCC = 400V
14
12
VCC = 600V
10
8
6
4
2
0
0 500 1000 1500 2000 2500
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
IGBT part: Per unit base = Rth(j–c) = 0.21°C/W
FWDi part: Per unit base = Rth(j–c) = 0.24°C/W
3 CLAMP Di part: Per unit base = Rth(j–c) = 0.24°C/W
2
100
7
5
3
2
10–1
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
10–3
Single Pulse
TC = 25°C
3
2
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TMIE (s)
Mar.2002
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