CM200DU-24NFH 查看數據表（PDF） - Mitsumi

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CM200DU-24NFH

IGBT MODULES HIGH POWER SWITCHING USE

Mitsumi 

MAXIMUM RATINGS (Tj = 25°C)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

PC’ (Note 3)

Tj

Tstg

Viso

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

G-E Short

C-E Short

Operation

Pulse

Operation

Pulse

TC = 25°C

TC’ = 25°C*4

Conditions

Main Terminal to base plate, AC 1 min.

Main Terminal M6

Mounting holes M6

Typical value

MITSUBISHI IGBT MODULES

CM200DU-24NFH

HIGH POWER SWITCHING USE

(Note 2)

(Note 2)

(Note 2)

(Note 2)

Ratings

1200

±20

200

400

200

400

830

1300

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5

400

Unit

V

V

A

A

A

A

W

W

°C

°C

V

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Parameter

Test conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V

4.5

IGES

Gate leakage current

VGE = VGES, VCE = 0V

—

Collector-emitter

Tj = 25°C

—

VCE(sat) saturation voltage (Note 4) Tj = 125°C

IC = 200A, VGE = 15V

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 600V, IC = 200A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 600V, IC = 200A

—

td(off)

Turn-off delay time

VGE1 = VGE2 = 15V

—

tf

Turn-off fall time

RG = 1.6Ω, Inductive load switching operation

—

trr (Note 1) Reverse recovery time

IE = 200A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 200A, VGE = 0V

—

Rth(j-c)Q Thermal resistance*1

IGBT part (1/2 module)

—

Rth(j-c)R

FWDi part (1/2 module)

—

Rth(c-f)

Contact thermal resistance Case to fin, Thermal compound Applied*2 (1/2 module)

—

Rth(j-c’)Q Thermal resistance*4

IGBT part (1/2 module)

—

Rth(j-c’)R

FWDi part (1/2 module)

—

RG

External gate resistance

1.6

*1 : TC measured point is shown in page OUTLINE DRAWING.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*3 : If you use this value, Rth(f-a) should be measured just under the chips.

*4 : TC’ measured point is just under the chips.

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. No short circuit capability is designed.

Limits

Typ.

Max. Unit

—

1

mA

6

7.5

V

—

0.7

µA

5.0

6.5

5.0

—

V

—

32

nF

—

2.7

nF

—

0.6

nF

900

—

nC

—

300

ns

—

80

ns

—

500

ns

—

150

ns

—

250

ns

7.5

—

µC

—

3.5

V

—

0.15 °C/W

—

0.24 °C/W

0.04

— °C/W

— 0.095*3 °C/W

—

0.14*3 °C/W

—

16

Ω

Feb.2004

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