CM300DY-34A 查看數據表（PDF） - Mitsumi

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CM300DY-34A

IGBT MODULES HIGH POWER SWITCHING USE

Mitsumi 

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

DC, TC = 108°C*1

Pulse

Operation

Pulse

TC = 25°C*1

Conditions

Main terminal to base plate, AC 1 min.

Main terminal M6

Mounting holes M6

Typical value

MITSUBISHI IGBT MODULES

CM300DY-34A

HIGH POWER SWITCHING USE

(Note 2)

(Note 2)

(Note 2)

(Note 2)

Ratings

1700

±20

300

600

300

600

2900

–40 ~ +150

–40 ~ +125

3500

3.5 ~ 4.5

3.5 ~ 4.5

580

Unit

V

V

A

A

W

°C

°C

V

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

Gate-emitter threshold

VGE(th)

voltage

IC = 30mA, VCE = 10V

5.5

IGES

Gate leakage current

±VGE = VGES, VCE = 0V

—

Collector to emitter saturation Tj = 25°C

—

VCE(sat) voltage

Tj = 125°C

IC = 300A, VGE = 15V

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 1000V, IC = 300A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 1000V, IC = 300A

—

td(off)

Turn-off delay time

VGE1 = VGE2 = 15V

—

tf

Turn-off fall time

RG = 1.6Ω, Inductive load switching operation

—

trr (Note 1) Reverse recovery time

IE = 300A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 300A, VGE = 0V

—

Rth(j-c)Q

Rth(j-c)R

Thermal resistance

IGBT part (1/2 module)*1

FWDi part (1/2 module)*1

—

—

Rth(c-f)

Contact thermal resistance

Case to fin, Thermal compound applied (1/2 module)*1,*2

—

RG

External gate resistance

1.6

Limits

Typ.

—

7.0

—

2.2

2.45

—

—

—

2000

—

—

—

—

—

30

—

—

—

0.02

—

*1 : Tc, Tf measured point is just under the chips.

*2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”.

Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Max. Unit

1

mA

8.5

2.0

2.8

—

74

8.4

1.6

—

600

200

850

350

450

—

3.0

0.043

0.072

—

16

V

µA

V

nF

nC

ns

µC

V

°C/W

Ω

Jun. 2007

2

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