CM400DY-34A 查看數據表（PDF） - Mitsumi
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CM400DY-34A Datasheet PDF : 5 Pages
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
(TYPICAL)
104
7
5
3
2
td(off)
103
td(on)
7
tf
5
3
2
102
7
5
3
2
1011 01
tr
2 3 5 7 102
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.2Ω
Tj = 125°C
Inductive load
2 3 5 7 103
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
103
102
Err
7
7
5
5
3
3
2
Eon
2
102
7
5
3
2
1011 01
23
5 7 102
Eoff 101
7
Conditions:
5
VCC = 1000V
VGE = ±15V
3
RG = 1.2Ω
2
Tj = 125°C
Inductive load
100
2 3 5 7 103
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101101
trr
Irr
2 3 5 7 102
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.2Ω
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IC (A)
4
MITSUBISHI IGBT MODULES
CM400DY-34A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
(TYPICAL)
104
7
5
3
2
td(on)
td(off)
103
7
5
tr
3
tf
2
102
7
5
3
2
1011 00
23
5 7 101
Conditions:
VCC = 1000V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive load
2 3 5 7 102
GATE RESISTANCE RG (Ω)
103
7
5
3
2
102
7
5
3
2
101100
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
102
Err
7
5
Eon
3
2
23
Eoff
101
5 7 101
7
Conditions:
VCC = 1000V 5
VGE = ±15V
3
IC = 400A
Tj = 125°C
2
Inductive load
100
2 3 5 7 102
GATE RESISTANCE RG (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
100
7
5
3
2
10–1
7
5
3
2
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
10–2
7
5 IGBT part:
3 Per unit base = Rth(j–c) = 0.033K/W
2 FWDi part:
Per unit base = Rth(j–c) = 0.055K/ W
10–3
10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101
TIME (s)
Feb. 2009
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