CMPDM7002AE(2013) 查看數據表（PDF） - Central Semiconductor

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CMPDM7002AE
(Rev.:2013)

ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

Central Semiconductor 

CMPDM7002AE

ENHANCED SPECIFICATION

SURFACE MOUNT SILICON

N-CHANNEL

ENHANCEMENT-MODE

MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPDM7002AE

is a special ESD protected version of the 2N7002

enhancement-mode N-Channel MOSFET designed for

high speed pulsed amplifier and driver applications.

MARKING CODE: C702E

SOT-23 CASE

APPLICATIONS:

• Load/Power switches

• DC-DC converter circuits

• Power management

FEATURES:

♦• ESD protection up to 1800V

• 350mW power dissipation

• Low gate charge

• Low rDS(ON)

MAXIMUM RATINGS: (TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

♦ Continuous Drain Current

Maximum Pulsed Drain Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VDS

VDG

VGS

ID

IDM

PD

TJ, Tstg

ΘJA

60

60

20

300

800

350

-65 to +150

357

UNITS

V

V

V

mA

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=20V, VDS=0

♦ IDSS

VDS=60V, VGS=0

IDSS

VDS=60V, VGS=0, TJ=125°C

♦ BVDSS

VGS=0, ID=10μA

60

70

VGS(th)

VDS=VGS, ID=250μA

1.2

1.5

VSD

VGS=0, IS=115mA

0.5

♦ rDS(ON)

VGS=10V, ID=500mA

1.0

rDS(ON)

VGS=5.0V, ID=100mA

1.1

rDS(ON)

VGS=2.5V, ID=10mA

3.0

gFS

VDS=10V, ID=200mA

220

Crss

VDS=25V, VGS=0, f=1.0MHz

Ciss

VDS=25V, VGS=0, f=1.0MHz

Coss

VDS=25V, VGS=0, f=1.0MHz

♦ Enhanced specification

MAX

10

100

500

2.0

1.1

1.4

1.8

6.0

5.0

50

25

UNITS

μA

nA

μA

V

V

V

Ω

Ω

Ω

mS

pF

pF

pF

R3 (3-October 2013)

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