CMPT6517 查看數據表（PDF） - Central Semiconductor

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CMPT6517

SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS

Central Semiconductor 

CMPT6517 NPN

CMPT6520 PNP

SURFACE MOUNT

COMPLEMENTARY HIGH VOLTAGE

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6517 and

CMPT6520 are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for high

voltage driver and amplifier applications.

MARKING CODES: CMPT6517: C1Z

CMPT6520: C2Z

SOT-23 CASE

MAXIMUM RATINGS: (TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

IB

PD

TJ, Tstg

ΘJA

350

350

5.0

500

250

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

ICBO

VCB=250V

IEBO

VEB=5.0V (CMPT6517)

IEBO

VEB=4.0V (CMPT6520)

BVCBO

IC=100µA

350

BVCEO

IC=1.0mA

350

BVEBO

IE=10µA (CMPT6517)

6.0

BVEBO

IE=10µA (CMPT6520)

5.0

VCE(SAT) IC=10mA, IB=1.0mA

VCE(SAT) IC=20mA, IB=2.0mA

VCE(SAT) IC=30mA, IB=3.0mA

VCE(SAT) IC=50mA, IB=5.0mA

VBE(SAT) IC=10mA, IB=1.0mA

VBE(SAT) IC=20mA, IB=2.0mA

VBE(SAT) IC=30mA, IB=3.0mA

VBE(ON) IC=10V, IC=100mA

hFE

VCE=10V, IC=1.0mA

20

hFE

VCE=10V, IC=10mA

30

MAX

50

50

50

0.30

0.35

0.50

1.0

0.75

0.85

0.90

2.0

UNITS

V

V

V

mA

mA

mW

°C

°C/W

UNITS

nA

nA

nA

V

V

V

V

V

V

V

V

V

V

V

V

R5 (1-February 2010)

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