GLT44016-28J4 查看數據表（PDF） - G-Link Technology

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GLT44016-28J4

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

G-Link Technology  

G-LINK

GLT44016

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug, 2000(Rev.3.1)

Features :

∗ 262,144 words by 16 bits organization.

∗ Fast access time and cycle time.

∗ Dual CAS Input.

∗ Low power dissipation.

∗ Read-Modify-Write, RAS -Only Refresh,

CAS -Before-RAS Refresh, Hidden

Refresh and Test Mode Capability.

∗ 512 refresh cycles per 8ms.

∗ Available in 40-Pin 400 mil SOJ and 40/44

Pin TSOP(II)

∗ Single 5.0V±10% Power Supply.

∗ All inputs and Outputs are TTL

compatible.

∗ Extended Data-Out(EDO) Page Mode

operation.

Description :

The GLT44016 is a 262,144 x 16 bit

high-performance CMOS dynamic random

access memory. The GLT44016 offers Fast

Page mode with Extended Data Output, and

has both BYTE WRITE and WORD WRITE

access cycles via two CAS pins. The

GLT44016 has symmetric address and

accepts 512-cycle refresh in 8ms interval.

All inputs are TTL compatible. EDO

Page Mode operation allows random access

up to 512 x 16 bits within a page, with cycle

times as short as 10ns.

The GLT44016 is best suited for

graphics, and DSP applications requiring

high performance memories.

HIGH PERFORMANCE

Max. RAS Access Time, (tRAC)

25 28 30 35 40 50

25 ns 28 ns 30 ns 35 ns 40 ns 50 ns

Max. Column Address Access Time, (tCAA)

13 ns 13 ns 16 ns 18 ns 20 ns 25 ns

Min. Extended Data Out Page Mode Cycle Time, (tPC) 10 ns 10 ns 12 ns 13 ns 15 ns 20 ns

Min. Read/Write Cycle Time, (tRC)

45 ns 45 ns 60 ns 65 ns 70 ns 85 ns

Max. CAS Access Time (tCAC)

8 ns 8 ns 10 ns 11 ns 12 ns 14 ns

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-1-

G-Link Technology Corporation,Taiwan

6F, No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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