TGA1141 查看數據表（PDF） - TriQuint Semiconductor

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TGA1141

33-36 GHz 2W Power Amplifier

TriQuint Semiconductor 

Not Recommended for New Designs

Product Data Sheet

August 5, 2008

TABLE I

MAXIMUM RATINGS

TGA1141

Symbol

V+

V-

I+

| IG |

PD

PIN

TCH

TM

TSTG

Parameter 1/

Positive Supply Voltage

Negative Supply Voltage Range

Positive Supply Current

Gate Supply Current

Power Dissipation

Input Continuous Wave Power

Operating Channel Temperature

Mounting Temperature (30 seconds)

Storage Temperature

Value

Notes

8V

-5V TO 0V

1.76 A

70 mA

9.4 W

27 dBm

150 °C

320 °C

-65 °C to 150 °C

2/

2/

2/, 3/

2/

4/, 5/

1/ These ratings represent the maximum operable values for this device.

2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply

current, input power, and output power shall not exceed PD.

3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median

life is 1 E+6 hours.

4/ Junction operating temperature will directly affect the device median time to failure (TM). For

maximum life, it is recommended that junction temperatures be maintained at the lowest

possible levels.

5/ These ratings apply to each individual FET.

TABLE II

DC PROBE TESTS

(TA = 25 °C, Nominal)

Symbol

Idss

Gm

VP

BVGS

BVGD

Parameter

Saturated Drain Current

Transconductance

Pinch-off Voltage

Breakdown Voltage gate-

source

Breakdown Voltage gate-

drain

Minimum

40

88

-1.5

-30

Maximum

188

212

-0.5

-8

-30

-8

Value

mA

mS

V

V

V

2

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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