DAN222TL 查看數據表（PDF） - ROHM Semiconductor

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DAN222TL

Band Switching Diode

ROHM Semiconductor 

Data Sheet

Band Switching Diode

DAN222

Applications

Ultra high speed switching

Features

1) Ultra small mold type. (EMD3)

2) High reliability.

Construction

Silicon epitaxial planar

Dimensions (Unit : mm)

Land size figure (Unit : mm)

1.6±0.2

0.3±0.1

　　　 0.05

(3)

0.2±0.1

(2)

(1)

　　-0.05

0.5 0.5

1.0± 0.1

0.15±0.05

1.0

0.5 0.5

0.7

0～ 0 .1

0.55±0.1

0.7± 0.1

EMD3 0.6

0.6

Structure

ROHM : EMD3

JEDEC : SOT-416

JEITA : SC-75A

dot (year week factory)

Taping specifications (Unit : mm)

4.0±0.1

2.0±0.05

φφ1.15.55±00..1

　　　　　00

0.3±0.1

1.8±0 .1

φ0 .5±0.1

0.9±0.2

Absolute maximum ratings (Ta=25°C)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Forward current (single)

Average rectified forward voltage (single)

Surge current （t=1us）

Power dissipation

Junction temperature

Storage temperature

Rated in slash put frequency

Symbol

VRM

VR

IFM

Io

Isurge

Pd

Tj

Tstg

f

Limits

80

80

300

100

4

150

150

55 to 150

100

Unit

V

V

mA

mA

A

mW

°C

°C

MHz

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Forward voltage

VF

-

-

1.2

Reverse current

IR

-

-

0.1

Capacitance between terminals

Ct

-

-

3.5

Reverse recovery time

trr

-

-

4

Unit

Conditions

V

IF=100mA

μA

VR=70V

pF

VR=6V , f=1MHz

ns

VR=6V , IF=5mA , RL=50Ω

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1/2

2011.06 - Rev.B

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