DAN222WM(2011) 查看數據表（PDF） - ROHM Semiconductor

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DAN222WM
(Rev.:2011)

Switching Diode

ROHM Semiconductor 

DAN222WM

　

Data Sheet

30

Ta=25°C

25

IF=100mA

IR=100mA

AVE:19.0ns

Irr=0.1*IR

n=10pcs

20

15

10

5

0

trr DISPERSION MAP

20

n=10pcs

15

AVE: 8.0kV

10

5

AVE: 1.6kV

0

C=200pF

R=0Ω

C=100pF

R=1.5kΩ

ESD DISPERSION MAP

5

IFSM

4

8.3m 8.3ms

s

3

1cyc

2

1

0

1

10

100

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

1000

100

Rth(j-a)

Rth(j-c)

10

0.001

Mounted on epoxy board

0.01 0.1

1

10

100

TIME:t(s)

Rth-t CHARACTERISTICS

1000

100

IFSM

t

10

1

0.1

5

4

3

2

1

0

1

10

100

TIME:t(ms)

IFSM-t CHARACTERISTICS

IFSM

8.3ms

1cyc

AVE:2.5A

IFSM DISPERSION MAP

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2011.10 - Rev.A

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