ACR300SG33 查看數據表（PDF） - Dynex Semiconductor
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ACR300SG33 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
ACR300SG33
CURRENT RATINGS
Tcase = 80°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS) RMS value
IT
Continuous (direct) on-state current
Single Side Cooled (Anode side)
IT(AV) Mean on-state current
IT(RMS) RMS value
IT
Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Max. Units
493
A
774
A
630
A
343
A
539
A
420
A
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
THERMAL AND MECHANICAL RATINGS
Test Conditions
10ms half sine, Tcase = 125°C
VR = 0
Max.
6.5
211
Units
kA
kA2s
Symbol
Parameter
Test Conditions
Min.
Rth(j-c)
Thermal resistance – junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance – case to heatsink Clamping force 7.0±1kN
(with mounting compound)
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
Storage temperature range
Clamping force
DC
-
Anode DC
-
Cathode DC
-
Double side
-
Single side
-
-
-
-55
6
Max. Units
0.042
0.070
0.092
0.018
.036
135
125
125
8
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
2/7
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