CDH2D09 查看數據表（PDF） - Maxim Integrated

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CDH2D09

PMIC with Integrated Charger and Smart Power Selector for Handheld Devices

Maxim Integrated 

PMIC with Integrated Charger and

Smart Power Selector for Handheld Devices

ABSOLUTE MAXIMUM RATINGS

USB, DC, PEN1 to AGND.......................................-0.3V to +16V

SYS, BAT, PV1, PV2, PV3 to AGND..........................-0.3V to +6V

PG1, PG2, PG3, AGND .........................................-0.3V to +0.3V

PV1, PV2, PV3 to SYS............................................-0.3V to +0.3V

VL to AGND ...........................................................-0.3V to +4.0V

CISET, DISET, BVSET, CT, THM to AGND..-0.3V to (VVL + 0.3V)

PV4, PV5, BP, FB1, FB2, FB3 to AGND ....-0.3V to (VSYS + 0.3V)

PEN2, USUS, CEN, EN, PWM to AGND ..................-0.3V to +6V

CST1, CST2, DOK, UOK to AGND ...........................-0.3V to +6V

OUT4, FB4 to AGND .................................-0.3V to (VPV4 + 0.3V)

OUT5, FB5 to AGND .................................-0.3V to (VPV5 + 0.3V)

LX1, LX2, LX3 Continuous RMS Current (Note 1).................1.5A

BAT Continuous Current .......................................................1.5A

SYS Continuous Current .......................................................1.5A

Continuous Power Dissipation (TA = +70°C)

40-Pin, 5mm x 5mm, Thin QFN (derate 35.7mW/°C

above +70°C)..............................................................2857mW

Operating Junction Temperature.....................................+150°C

Storage Junction Temperature Range ..............-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

Note 1: LX_ has internal clamp diodes to PG_ and PV_. Applications that forward bias these diodes must take care not to exceed

the package power dissipation limits.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

(DC, USB, BVSET, UOK, DOK, LX_ unconnected; VTHM = VL/2, VPG_ = VAGND = 0V, VBAT = 4V, CEN = low, USUS = low, EN = high,

VPEN1 = VPEN2 = 3.3V, VPWM = 0V, COUT4 = 1µF, COUT5 = 1µF, CSYS = 10µF, PV1 = PV2 = PV3 = PV4 = PV5 = SYS, RDISET = 3kΩ,

RCISET = 3kΩ, CVL = 0.1µF, CCT = 0.15µF, CBP = 0.01µF, VFB1 = 1.1V, VFB2 = 1.1V, VFB3 = 1.1V, TA = -40°C to +85°C, unless other-

wise noted.) (Note 2)

PARAMETER

SYMBOL

CONDITIONS

MIN TYP MAX UNITS

DC POWER INPUT (VDC = 5.0V, EN = low)

DC Voltage Range

Operating voltage

VDC

Withstand voltage

4.1

6.6

V

0

14

SYS Regulation Voltage

VSYS_REG

VDC = 6V, USUS = low, CEN = high, system

current is less than the input current limit

5.2

5.3

5.4

V

DC Undervoltage Threshold

DC Overvoltage Threshold

DC Current Limit

RDISET Resistance Range

DC Quiescent Current

Minimum DC-to-BAT Voltage

Headroom

Minimum DC-to-SYS Voltage

Headroom

VDCL

VDCH

IDCLIM

VDC rising, 500mV typical hysteresis

VDC rising, 400mV typical hysteresis

PEN1 = low,

VDC = 6V, VSYS = 5V PEN2 = low,

USB unconnected, USUS = low

CEN = low,

PEN1 = low,

TA = +25°C,

VL = no load

PEN2 = high,

USUS = low

(Note 3)

PEN1 = high,

RDISET = 3kΩ

IDCIQ

PEN1 = low, USUS = high

USUS = low, CEN = low;

ISYS = 0mA, IBAT = 0mA, EN = low;

VL no load

USUS = low, CEN = high;

ISYS = 0mA, VEN = 0V, VL no load

VDC falling, 200mV hysteresis

VDC falling, 200mV hysteresis

3.95 4.00 4.05

V

6.8

6.9

7.0

V

90

95

100

450

475

500

mA

950 1000 1050

3

6

kΩ

0.11

1.1

mA

0.7

0

15

30

mV

0

15

30

mV

DC-to-SYS Dropout Resistance

RDS VDC = 5V, ISYS = 400mA, USUS = low

0.325 0.600

Ω

4 _______________________________________________________________________________________

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