DG417(1999) 查看數據表（PDF） - Vishay Semiconductors
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DG417 Datasheet PDF : 10 Pages
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DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Supply Voltage
50
ID = –10 mA
"5 V
40
"8 V
30
"10 V
"12 V
"15 V
20
"20 V
10
rDS(on) vs. Temperature
40
TA = 125_C
30
20
25_C
–55_C
10
0
–20 –15 –10 –5 0
5 10
VD – Drain Voltage (V)
15 20
Leakage Currents vs. Analog Voltage
30
V+ = 15 V
V– = –15 V
20 VL = 5 V
10
DG417/418: ID(off), IS(off)
DG419: IS(off)
0
–10
DG417/418: ID(on)
DG419: ID(off), ID(on)
–20
0
–15 –10
–5
0
5
10
15
VD – Drain Voltage (V)
Drain Charge Injection
200
V+ = 16.5 V
V– = –16.5 V
150
VL = 5 V
VIN = 0 V
CL = 10 nF
1 nF
100
500 pF
50
100 pF
0
–30
–15 –10
–5
0
5
10
15
VD or VS – Drain or Source Voltage (V)
–50
–15 –10
–5
0
5
10
15
VS – Source Voltage (V)
Input Switching Threshold vs. Supply Voltages
3.5
3.0
2.5
2.0
VL = 7 V
1.5
VL = 5 V
1.0
0.5
0
(V+) 5 10 15 20 25 30 35 40
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
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