DRDNB21D-7 查看數據表（PDF） - Diodes Incorporated.
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DRDNB21D-7 Datasheet PDF : 7 Pages
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Device Characteristics
250
200
Note 4
150
100
50
0
0
40
80
120
160 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve (Total Device)
DRDNB21D
Pre-Biased NPN Transistor Elements
1
IC/IB = 10
0.1
0.01
TA = 75°C
TA = 25°C
TA = -25°C
1,000
100
0.001
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical VCE(SAT) vs. IC
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
DRDNB21D
Document number: DS30756 Rev. 6 - 2
3 of 7
www.diodes.com
February 2011
© Diodes Incorporated
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