DS1808 查看數據表（PDF） - Maxim Integrated
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DS1808 Datasheet PDF : 1 Pages
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Reliability Report: DS1808
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer,
Passivation w/Nov TEOS Oxide-Nitride
Metal: Al / 0.5% Cu / 0.8% Si
Gate Ox Thickness: 225 Å
Pin Count: 16
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Cf: 60%
Ea: 0.7
β: 0
Tuse: 25 °C
Vuse: 5.5 Volts
Assembly:
Package:
Body Size:
ATP (Amkor, PI)
SOIC
150x1.4
DESCRIPTION
VEHICLE REV DATE CODE CONDITION
READPOINT QUANTITY FAILS FILE # DEVICE HRS
HIGH TEMPERATURE OPERATING LIFE
HIGH VOLTAGE LIFE DS1808
A2
DS1808
A2
0133 125C, 6.0 V (PSA) & +13.2 V (PS 6
HOURS
80
0
0133 125C, 6.0 V (PSA) & +13.2 V (PS 336
HOURS
80
0
DEVICE HRS: 2.54E+07
TOTALS: 0
FAILURE RATE MTBF (yrs): 3158
FITs:
36
452720
24899612
PRODUCT
DS1808
REV
A2
DIE SIZE (x)
159
DIE SIZE (y)
80
No. of Transistors
1700
Thursday, May 16, 2002
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