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DS21T09 查看數據表(PDF) - Dallas Semiconductor -> Maxim Integrated

零件编号
产品描述 (功能)
比赛名单
DS21T09
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS21T09 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-1.0V to +7.0V
0°C to 70°C
-55°C to +125°C
260°C for 10 seconds
DS21T09
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS21T09 is built to the highest quality standards and manufactured for long
term reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS21T09 is not exposed to environmental stresses, such as burn-
in, that some industrial applications require. For specific reliability information on this product, please
contact the factory in Dallas at (972) 371-4448.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
TERMPWR Voltage
Logic 1
Logic 0
SYMBOL
VTP
VIH
VIL
MIN
4.00
2.0
-0.3
TYP
DC CHARACTERISTICS
PARAMETER
TERMPWR Current
Power-Down Current
Termination Resistance
Die Thermal Shutdown
Power-Down
Termination Capacitance
Input Leakage High
Input Leakage Low
Output Current
Bus Current Sense
Trip Point
SYMBOL
ITP
ITP
IPD
RTERM
TSD
CPD
C14
IIH
IIL
IO
IBCST
MIN
108
-1.0
4
TYP
10
1
110
150
8
32
MAX
5.25
VTP + 0.3
+0.8
(0°C to 70°C)
UNITS
V
V
NOTES
1
V
1
MAX
500
14
2
112
1.0
(0°C to 70°C)
UNITS
mA
mA
NOTES
2, 4
2, 5
mA
2, 3, 6
2, 3
°C
2
pF
2, 3, 6, 7
pF 2, 3, 6, 7, 8
µA
2, 12
µA
2, 9, 12
mA
10
mA
11
REGULATOR CHARACTERISTICS
PARAMETER
Output Voltage
Drop Out Voltage
Line Regulation
Load Regulation
Current Limit
Sink Current
SYMBOL
VREF
VDROP
LIREG
LOREG
IL
ISINK
MIN
2.79
(0°C to 70°C)
TYP
2.85
MAX UNITS NOTES
2.93
V
2, 3
0.75
1.0
V
4, 7
1.0
2.0
%
2, 5
1.3
3.0
%
2, 3
900
mA
2
400
mA
2
9 of 10

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