RMWM38001 查看數據表（PDF） - Raytheon Company
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RMWM38001 Datasheet PDF : 5 Pages
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RMWM38001
38 GHz Mixer MMIC
Application
Information
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Figure 1
Functional Block
Diagram
Up-Conversion
MMIC Chip
RF OUT
IF IN
RF IN
Down-Conversion
MMIC Chip
IF OUT
Figure 2
Chip Layout and
Bond Pad Locations
Chip Size is 1.4 mm
x 1.4 mm x 100 µm.
Back of chip is RF
ground
Ground
(Back of Chip)
LO IN
Dimensions in mm
0.0
1.4
0.7205 0.863
Ground
(Back of Chip)
LO IN
1.4
1.4
www.raytheon.com/micro
0.3055
0.163
0.0
0.0
0.3065
0.164
0.0
1.4
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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