EDF1BS-E3/45 查看數據表（PDF） - Vishay Semiconductors

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比赛名单

EDF1BS-E3/45

Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifiers

Vishay Semiconductors 

www.vishay.com

EDF1AS, EDF1BS, EDF1CS, EDF1DS

Vishay General Semiconductor

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

EDF1AS

EDF1BS

EDF1CS

Typical thermal resistance (1)

RJA

38

RJL

12

Note

(1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

EDF1DS

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE

EDF1DS-E3/45

0.406

45

EDF1DS-E3/77

0.406

77

BASE QUANTITY

50

1500

DELIVERY MODE

Tube

13" diameter paper tape and reel



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

1.0

0.75

0.5

0.25

Capacitive

Loads

Ipk

IAV

=

5.0

10

20

IPK/IAV = π Resistive

or Inductive Load

0.51 x 0.51" (13 x 13 mm)

Copper Pads

0

20 40 60 80 100 120 140 160

Ambient Temperature (°C)

Fig. 1 - Derating Curves Output Rectified Current

60

TJ = 150 °C

Single Sine-Wave

50

40

30

20

10

1.0 Cycle

0

1

10

100

Number of Cycles at 60 Hz

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

10

1

0.1

0.01

0.4

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.6

0.8

1.0

1.2

1.4

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Forward Characteristics Per Diode

1000

100

TJ = 125 °C

10

1

TJ = 25 °C

0.1

0

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Revision: 19-Aug-13

2

Document Number: 88578

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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