FDU6696 查看數據表（PDF） - Fairchild Semiconductor
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FDU6696 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 13A
8
6
VD S = 10V
15V
20V
4
2
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
R DS(ON) LIMIT
100
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJ A = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
2500
2000
1500
f = 1MHz
VGS = 0 V
Ciss
1000
Coss
500
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
0.01
0.1
SINGLE PULSE
RθJ A = 96°C/W
TA = 25°C
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6696/FDU6696 Rev. D (W)
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